B772 transistor (pnp) features power dissipation p cm: 500 mw (tamb=25 ) collector current i cm: -3 a collector-base voltage v (br)cbo: -40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) classification of h fe(1) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic=-100a , i e =0 -40 v collector-emitter breakdown voltage v(br) ceo i c = -10 ma , i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -100 a, i c =0 -6 v collector cut-off current i cbo v cb = -40 v, i e =0 -1 a collector cut-off current i ceo v ce =-30 v, i b =0 -10 a emitter cut-off current i ebo v eb =-6v, i c =0 -1 a h fe(1) v ce = -2v, i c = -1a 60 400 dc current gain h fe(2) v ce =-2v, i c = -100ma 32 collector-emitter saturation voltage v ce (sat) i c =-2a, i b = -0.2a -0.5 v base-emitter saturation voltage v be (sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce = -5v, c =-0.1a f = 10mhz 50 mhz classification of h fe (1) rank r o y gr range 60-120 100-200 160-320 200-400 sot-89 1. base 2. colletor 3. emitter 1 2 3 b 772 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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